N-channel transistor, 12.6A, 20A, 100uA, 0.26 Ohms, TO-247, TO-247, 600V - STW20NM60

Quantity	excl. VAT	VAT incl.
1 - 1	4.85£	5.82£
2 - 2	4.61£	5.53£
3 - 4	4.36£	5.23£
5 - 9	4.12£	4.94£
10 - 19	4.02£	4.82£
20 - 29	3.93£	4.72£
30 - 30	3.78£	4.54£

Quantity	U.P
1 - 1	4.85£	5.82£
2 - 2	4.61£	5.53£
3 - 4	4.36£	5.23£
5 - 9	4.12£	4.94£
10 - 19	4.02£	4.82£
20 - 29	3.93£	4.72£
30 - 30	3.78£	4.54£

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 30

Set of 1

N-channel transistor, 12.6A, 20A, 100uA, 0.26 Ohms, TO-247, TO-247, 600V - STW20NM60. N-channel transistor, 12.6A, 20A, 100uA, 0.26 Ohms, TO-247, TO-247, 600V. ID (T=100°C): 12.6A. ID (T=25°C): 20A. Idss (max): 100uA. On-resistance Rds On: 0.26 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 600V. C(in): 1450pF. Cost): 350pF. Channel type: N. Trr Diode (Min.): 510 ns. Type of transistor: MOSFET. Id(imp): 80A. IDss (min): 1uA. Marking on the case: W20NM60. Pd (Power Dissipation, Max): 214W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 6 ns. Td(on): 25 ns. Technology: MDmesh PpwerMOSFET. Operating temperature: -65...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 21/04/2025, 01:25.

Technical documentation