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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 5.8A, 9.2A, 50uA, 0.82 Ohms, TO-247, TO-247, 900V - STW11NK90Z

N-channel transistor, 5.8A, 9.2A, 50uA, 0.82 Ohms, TO-247, TO-247, 900V - STW11NK90Z
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Quantity excl. VAT VAT incl.
1 - 1 4.40£ 5.28£
2 - 2 4.18£ 5.02£
3 - 4 3.96£ 4.75£
5 - 9 3.74£ 4.49£
10 - 19 3.65£ 4.38£
20 - 29 3.56£ 4.27£
30 - 59 3.43£ 4.12£
Quantity U.P
1 - 1 4.40£ 5.28£
2 - 2 4.18£ 5.02£
3 - 4 3.96£ 4.75£
5 - 9 3.74£ 4.49£
10 - 19 3.65£ 4.38£
20 - 29 3.56£ 4.27£
30 - 59 3.43£ 4.12£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 59
Set of 1

N-channel transistor, 5.8A, 9.2A, 50uA, 0.82 Ohms, TO-247, TO-247, 900V - STW11NK90Z. N-channel transistor, 5.8A, 9.2A, 50uA, 0.82 Ohms, TO-247, TO-247, 900V. ID (T=100°C): 5.8A. ID (T=25°C): 9.2A. Idss (max): 50uA. On-resistance Rds On: 0.82 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 900V. C(in): 3000pF. Cost): 240pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 584 ns. Type of transistor: MOSFET. Function: ZenerProtect. Id(imp): 36.8A. IDss (min): 1uA. Marking on the case: W11NK90Z. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 76 ns. Td(on): 30 ns. Technology: SuperMesh PpwerMOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 30. Spec info: Gate source ESD (HBM-C=100pF, R=1.5KW) 6000V. G-S Protection: yes. Quantity in stock updated on 21/04/2025, 02:25.

Technical documentation

Equivalent products :

Quantity in stock : 39
STW11NK100Z

STW11NK100Z

N-channel transistor, 5.2A, 8.3A, 50uA, 1.1 Ohms, TO-247, TO-247, 1000V. ID (T=100°C): 5.2A. ID (T=...
STW11NK100Z
N-channel transistor, 5.2A, 8.3A, 50uA, 1.1 Ohms, TO-247, TO-247, 1000V. ID (T=100°C): 5.2A. ID (T=25°C): 8.3A. Idss (max): 50uA. On-resistance Rds On: 1.1 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 1000V. C(in): 3500pF. Cost): 270pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 560 ns. Type of transistor: MOSFET. Function: extremely high dv/dt capability, Switching applications. Id(imp): 33.2A. IDss (min): 1uA. Marking on the case: W11NK100Z. Pd (Power Dissipation, Max): 230W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 98 ns. Td(on): 27 ns. Technology: Zener - Protected SuperMESH™ PowerMOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 30. Spec info: Gate source ESD (HBM-C=100pF, R=1.5KW) 6000V. Drain-source protection : yes. G-S Protection: yes
STW11NK100Z
N-channel transistor, 5.2A, 8.3A, 50uA, 1.1 Ohms, TO-247, TO-247, 1000V. ID (T=100°C): 5.2A. ID (T=25°C): 8.3A. Idss (max): 50uA. On-resistance Rds On: 1.1 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 1000V. C(in): 3500pF. Cost): 270pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 560 ns. Type of transistor: MOSFET. Function: extremely high dv/dt capability, Switching applications. Id(imp): 33.2A. IDss (min): 1uA. Marking on the case: W11NK100Z. Pd (Power Dissipation, Max): 230W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 98 ns. Td(on): 27 ns. Technology: Zener - Protected SuperMESH™ PowerMOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 30. Spec info: Gate source ESD (HBM-C=100pF, R=1.5KW) 6000V. Drain-source protection : yes. G-S Protection: yes
Set of 1
4.93£ VAT incl.
(4.11£ excl. VAT)
4.93£

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