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N-channel transistor, 0.189A, 0.3A, 50uA, 13 Ohms, TO-92, TO-92Ammopak, 600V - STQ1NK60ZR-AP

N-channel transistor, 0.189A, 0.3A, 50uA, 13 Ohms, TO-92, TO-92Ammopak, 600V - STQ1NK60ZR-AP
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Quantity excl. VAT VAT incl.
1 - 4 0.71£ 0.85£
5 - 9 0.68£ 0.82£
10 - 24 0.64£ 0.77£
25 - 49 0.61£ 0.73£
50 - 99 0.59£ 0.71£
100 - 249 0.58£ 0.70£
250 - 1933 0.50£ 0.60£
Quantity U.P
1 - 4 0.71£ 0.85£
5 - 9 0.68£ 0.82£
10 - 24 0.64£ 0.77£
25 - 49 0.61£ 0.73£
50 - 99 0.59£ 0.71£
100 - 249 0.58£ 0.70£
250 - 1933 0.50£ 0.60£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 1933
Set of 1

N-channel transistor, 0.189A, 0.3A, 50uA, 13 Ohms, TO-92, TO-92Ammopak, 600V - STQ1NK60ZR-AP. N-channel transistor, 0.189A, 0.3A, 50uA, 13 Ohms, TO-92, TO-92Ammopak, 600V. ID (T=100°C): 0.189A. ID (T=25°C): 0.3A. Idss (max): 50uA. On-resistance Rds On: 13 Ohms. Housing: TO-92. Housing (according to data sheet): TO-92Ammopak. Voltage Vds(max): 600V. C(in): 94pF. Cost): 17.6pF. Channel type: N. Trr Diode (Min.): 135 ns. Type of transistor: MOSFET. Id(imp): 1.2A. IDss (min): 1uA. Marking on the case: 1NK60ZR. Pd (Power Dissipation, Max): 3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 13 ns. Td(on): 5.5 ns. Technology: SuperMESH™ Power MOSFET. Operating temperature: -50...+150°C. Gate/emitter voltage VGE(th) min.: 3V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Quantity per case: 1. Function: Zener-protected, ESD improved capability. Drain-source protection : yes. G-S Protection: yes. Quantity in stock updated on 21/04/2025, 03:25.

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