Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.71£ | 0.85£ |
5 - 9 | 0.68£ | 0.82£ |
10 - 24 | 0.64£ | 0.77£ |
25 - 49 | 0.61£ | 0.73£ |
50 - 99 | 0.59£ | 0.71£ |
100 - 249 | 0.58£ | 0.70£ |
250 - 1933 | 0.50£ | 0.60£ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.71£ | 0.85£ |
5 - 9 | 0.68£ | 0.82£ |
10 - 24 | 0.64£ | 0.77£ |
25 - 49 | 0.61£ | 0.73£ |
50 - 99 | 0.59£ | 0.71£ |
100 - 249 | 0.58£ | 0.70£ |
250 - 1933 | 0.50£ | 0.60£ |
N-channel transistor, 0.189A, 0.3A, 50uA, 13 Ohms, TO-92, TO-92Ammopak, 600V - STQ1NK60ZR-AP. N-channel transistor, 0.189A, 0.3A, 50uA, 13 Ohms, TO-92, TO-92Ammopak, 600V. ID (T=100°C): 0.189A. ID (T=25°C): 0.3A. Idss (max): 50uA. On-resistance Rds On: 13 Ohms. Housing: TO-92. Housing (according to data sheet): TO-92Ammopak. Voltage Vds(max): 600V. C(in): 94pF. Cost): 17.6pF. Channel type: N. Trr Diode (Min.): 135 ns. Type of transistor: MOSFET. Id(imp): 1.2A. IDss (min): 1uA. Marking on the case: 1NK60ZR. Pd (Power Dissipation, Max): 3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 13 ns. Td(on): 5.5 ns. Technology: SuperMESH™ Power MOSFET. Operating temperature: -50...+150°C. Gate/emitter voltage VGE(th) min.: 3V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Quantity per case: 1. Function: Zener-protected, ESD improved capability. Drain-source protection : yes. G-S Protection: yes. Quantity in stock updated on 21/04/2025, 03:25.
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