N-channel transistor, 4.7A, 11A, 100uA, 0.35 Ohms, TO-220, TO-220, 800V - STP11NM80

Quantity	excl. VAT	VAT incl.
1 - 1	4.76£	5.71£
2 - 2	4.52£	5.42£
3 - 4	4.29£	5.15£
5 - 9	4.05£	4.86£
10 - 19	3.95£	4.74£
20 - 29	3.86£	4.63£
30+	3.72£	4.46£

Quantity	U.P
1 - 1	4.76£	5.71£
2 - 2	4.52£	5.42£
3 - 4	4.29£	5.15£
5 - 9	4.05£	4.86£
10 - 19	3.95£	4.74£
20 - 29	3.86£	4.63£
30+	3.72£	4.46£

Delivery in 2-3 days, with postal tracking!

Out of stock

Set of 1

N-channel transistor, 4.7A, 11A, 100uA, 0.35 Ohms, TO-220, TO-220, 800V - STP11NM80. N-channel transistor, 4.7A, 11A, 100uA, 0.35 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 4.7A. ID (T=25°C): 11A. Idss (max): 100uA. On-resistance Rds On: 0.35 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. C(in): 1630pF. Cost): 750pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 612 ns. Type of transistor: MOSFET. Function: LOW INPUT CAPACITANCE, RESISTANCE AND GATE CHARGE. Id(imp): 44A. IDss (min): 10uA. Marking on the case: P11NM80. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 46 ns. Td(on): 22 ns. Technology: MDmesh MOSFET. Operating temperature: -65...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. G-S Protection: no. Quantity in stock updated on 21/04/2025, 06:25.

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