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N-channel transistor, 1.57A, 2.5A, 50mA, 3.8 Ohms, TO-251 ( I-Pak ), TO-251 ( I-Pak ), 800V - STD3NK80Z-1

N-channel transistor, 1.57A, 2.5A, 50mA, 3.8 Ohms, TO-251 ( I-Pak ), TO-251 ( I-Pak ), 800V - STD3NK80Z-1
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Quantity excl. VAT VAT incl.
1 - 4 1.10£ 1.32£
5 - 9 1.04£ 1.25£
10 - 24 0.99£ 1.19£
25 - 49 0.93£ 1.12£
50 - 98 0.91£ 1.09£
Quantity U.P
1 - 4 1.10£ 1.32£
5 - 9 1.04£ 1.25£
10 - 24 0.99£ 1.19£
25 - 49 0.93£ 1.12£
50 - 98 0.91£ 1.09£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 98
Set of 1

N-channel transistor, 1.57A, 2.5A, 50mA, 3.8 Ohms, TO-251 ( I-Pak ), TO-251 ( I-Pak ), 800V - STD3NK80Z-1. N-channel transistor, 1.57A, 2.5A, 50mA, 3.8 Ohms, TO-251 ( I-Pak ), TO-251 ( I-Pak ), 800V. ID (T=100°C): 1.57A. ID (T=25°C): 2.5A. Idss (max): 50mA. On-resistance Rds On: 3.8 Ohms. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251 ( I-Pak ). Voltage Vds(max): 800V. C(in): 485pF. Cost): 57pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 384 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. Id(imp): 10A. IDss (min): 1uA. Marking on the case: D3NK80Z. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 36ns. Td(on): 17 ns. Technology: Zener-protected SuperMESH™ Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 75. G-S Protection: yes. Quantity in stock updated on 21/04/2025, 06:25.

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