N-channel transistor, 6.8A, 11A, 100uA, 0.29 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 550V - STB12NM50N
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 4 | 3.97£ | 4.76£ |
| 5 - 9 | 3.77£ | 4.52£ |
| 10 - 24 | 3.57£ | 4.28£ |
| 25 - 49 | 3.37£ | 4.04£ |
| 50 - 99 | 3.29£ | 3.95£ |
| 100+ | 3.09£ | 3.71£ |
| Quantity | U.P | |
|---|---|---|
| 1 - 4 | 3.97£ | 4.76£ |
| 5 - 9 | 3.77£ | 4.52£ |
| 10 - 24 | 3.57£ | 4.28£ |
| 25 - 49 | 3.37£ | 4.04£ |
| 50 - 99 | 3.29£ | 3.95£ |
| 100+ | 3.09£ | 3.71£ |
N-channel transistor, 6.8A, 11A, 100uA, 0.29 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 550V - STB12NM50N. N-channel transistor, 6.8A, 11A, 100uA, 0.29 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 550V. ID (T=100°C): 6.8A. ID (T=25°C): 11A. Idss (max): 100uA. On-resistance Rds On: 0.29 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 550V. C(in): 940pF. Cost): 100pF. Channel type: N. Trr Diode (Min.): 340 ns. Type of transistor: MOSFET. Id(imp): 44A. IDss (min): 1uA. Marking on the case: B12NM50N. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 60 ns. Td(on): 15 ns. Technology: MDmesh Power MOSFET. Gate/source voltage Vgs: 25V. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. Function: HIGH dv/dt, Low Gate Capacitance. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 21/04/2025, 06:25.
Equivalent products :
STB12NM50ND
We also recommend :
CEL100UF63VESR-B
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.