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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 7A, 11A, 250uA, 0.34 Ohms, TO-220, TO-220-3-1, 600V - SPP11N60S5

N-channel transistor, 7A, 11A, 250uA, 0.34 Ohms, TO-220, TO-220-3-1, 600V - SPP11N60S5
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Quantity excl. VAT VAT incl.
1 - 4 3.88£ 4.66£
5 - 9 3.68£ 4.42£
10 - 24 3.57£ 4.28£
25 - 49 3.41£ 4.09£
50 - 53 3.29£ 3.95£
Quantity U.P
1 - 4 3.88£ 4.66£
5 - 9 3.68£ 4.42£
10 - 24 3.57£ 4.28£
25 - 49 3.41£ 4.09£
50 - 53 3.29£ 3.95£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 53
Set of 1

N-channel transistor, 7A, 11A, 250uA, 0.34 Ohms, TO-220, TO-220-3-1, 600V - SPP11N60S5. N-channel transistor, 7A, 11A, 250uA, 0.34 Ohms, TO-220, TO-220-3-1, 600V. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 250uA. On-resistance Rds On: 0.34 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220-3-1. Voltage Vds(max): 600V. C(in): 1460pF. Cost): 610pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 650ms. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. G-S Protection: no. Id(imp): 22A. IDss (min): 25uA. Marking on the case: 11N60S5. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 130 ns. Technology: Cool Mos POWER transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3.5V. Original product from manufacturer Infineon Technologies. Quantity in stock updated on 07/06/2025, 23:25.

Technical documentation

Equivalent products :

Out of stock
STP11NM80

STP11NM80

N-channel transistor, 4.7A, 11A, 100uA, 0.35 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 4.7A. ID (T=...
STP11NM80
N-channel transistor, 4.7A, 11A, 100uA, 0.35 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 4.7A. ID (T=25°C): 11A. Idss (max): 100uA. On-resistance Rds On: 0.35 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. C(in): 1630pF. Cost): 750pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 612 ns. Type of transistor: MOSFET. Function: LOW INPUT CAPACITANCE, RESISTANCE AND GATE CHARGE. G-S Protection: no. Id(imp): 44A. IDss (min): 10uA. Marking on the case: P11NM80. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 46 ns. Td(on): 22 ns. Technology: MDmesh MOSFET. Operating temperature: -65...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V
STP11NM80
N-channel transistor, 4.7A, 11A, 100uA, 0.35 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 4.7A. ID (T=25°C): 11A. Idss (max): 100uA. On-resistance Rds On: 0.35 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. C(in): 1630pF. Cost): 750pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 612 ns. Type of transistor: MOSFET. Function: LOW INPUT CAPACITANCE, RESISTANCE AND GATE CHARGE. G-S Protection: no. Id(imp): 44A. IDss (min): 10uA. Marking on the case: P11NM80. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 46 ns. Td(on): 22 ns. Technology: MDmesh MOSFET. Operating temperature: -65...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V
Set of 1
5.71£ VAT incl.
(4.76£ excl. VAT)
5.71£

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