N-channel transistor, TO-3PN ( 2-16C1B ), TO-3PSG, 300V - RJH30H2DPK-M0

N-channel transistor, TO-3PN ( 2-16C1B ), TO-3PSG, 300V - RJH30H2DPK-M0. N-channel transistor, TO-3PN ( 2-16C1B ), TO-3PSG, 300V. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PSG. Collector/emitter voltage Vceo: 300V. C(in): 1200pF. Cost): 80pF. CE diode: yes. Channel type: N. Trr Diode (Min.): 23 ns. Compatibility: Samsung PS42C450B1WXXU. Function: High Speed ​​Power Switching. Germanium diode: no. Collector current: 35A. Ic(pulse): 250A. Number of terminals: 3. Pd (Power Dissipation, Max): 60W. RoHS: yes. Spec info: trr 0.06us. Assembly/installation: PCB through-hole mounting. Td(off): 0.06 ns. Td(on): 0.02 ns. Technology: Trench gate and thin wafer technology G6H-II ser. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.4V. Maximum saturation voltage VCE(sat): 1.9V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V. Original product from manufacturer Renesas Technology. Quantity in stock updated on 08/06/2025, 03:25.