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N-channel transistor, 60.8A, 75A, 500uA, 12m Ohms, TO-220, TO-220AB ( SOT78 ), 100V - PSMN015-100P

N-channel transistor, 60.8A, 75A, 500uA, 12m Ohms, TO-220, TO-220AB ( SOT78 ), 100V - PSMN015-100P
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Quantity excl. VAT VAT incl.
1 - 4 2.59£ 3.11£
5 - 9 2.46£ 2.95£
10 - 12 2.33£ 2.80£
Quantity U.P
1 - 4 2.59£ 3.11£
5 - 9 2.46£ 2.95£
10 - 12 2.33£ 2.80£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 12
Set of 1

N-channel transistor, 60.8A, 75A, 500uA, 12m Ohms, TO-220, TO-220AB ( SOT78 ), 100V - PSMN015-100P. N-channel transistor, 60.8A, 75A, 500uA, 12m Ohms, TO-220, TO-220AB ( SOT78 ), 100V. ID (T=100°C): 60.8A. ID (T=25°C): 75A. Idss (max): 500uA. On-resistance Rds On: 12m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB ( SOT78 ). Voltage Vds(max): 100V. C(in): 4900pF. Cost): 390pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : diode. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 240A. IDss (min): 0.05uA. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 95 ns. Td(on): 25 ns. Technology: 'enhancement mode field-effect transistor'. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Spec info: IDM--240A (Tmb 25°C; pulsed). G-S Protection: no. Quantity in stock updated on 21/04/2025, 08:25.

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