N-channel transistor, 8A, 10A, 1uA, 10A, 0.03 Ohms, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 40V - P2804BDG

Quantity	excl. VAT	VAT incl.
1 - 4	1.55£	1.86£
5 - 9	1.48£	1.78£
10 - 24	1.40£	1.68£
25 - 49	1.32£	1.58£
50 - 99	1.29£	1.55£
100 - 249	1.26£	1.51£
250 - 779	1.20£	1.44£

Quantity	U.P
1 - 4	1.55£	1.86£
5 - 9	1.48£	1.78£
10 - 24	1.40£	1.68£
25 - 49	1.32£	1.58£
50 - 99	1.29£	1.55£
100 - 249	1.26£	1.51£
250 - 779	1.20£	1.44£

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 779

Set of 1

N-channel transistor, 8A, 10A, 1uA, 10A, 0.03 Ohms, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 40V - P2804BDG. N-channel transistor, 8A, 10A, 1uA, 10A, 0.03 Ohms, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 40V. ID (T=100°C): 8A. ID (T=25°C): 10A. Idss: 1uA. Idss (max): 10A. On-resistance Rds On: 0.03 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( D-PAK ). Voltage Vds(max): 40V. C(in): 790pF. Cost): 175pF. Channel type: N. Trr Diode (Min.): 15.5 ns. Type of transistor: MOSFET. Function: Logic Level Enhancement. Id(imp): 40A. Pd (Power Dissipation, Max): 32W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 11.8 ns. Td(on): 2.2 ns. Technology: Field Effect Transistor. Quantity per case: 1. Drain-source protection : no. G-S Protection: no. Quantity in stock updated on 21/04/2025, 15:25.

Technical documentation