N-channel transistor, 60A, TO-247, TO-247, 650V - MBQ60T65PES

N-channel transistor, 60A, TO-247, TO-247, 650V - MBQ60T65PES. N-channel transistor, 60A, TO-247, TO-247, 650V. Ic(T=100°C): 60A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 650V. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Collector current: 100A. Ic(pulse): 180A. Marking on the case: 60T65PES. Number of terminals: 3. Pd (Power Dissipation, Max): 535W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 142ns. Td(on): 45 ns. Technology: High Speed Fieldstop Trench IGBT, Second Generation. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.85V. Maximum saturation voltage VCE(sat): 2.4V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6V. CE diode: yes. Germanium diode: no. Quantity in stock updated on 21/04/2025, 16:25.