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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 50A, 150uA, 92 Ohms, TO-220, TO-220, 300V - IXTP50N25T

N-channel transistor, 50A, 150uA, 92 Ohms, TO-220, TO-220, 300V - IXTP50N25T
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 1 8.26£ 9.91£
2 - 2 7.85£ 9.42£
3 - 4 7.43£ 8.92£
5 - 9 7.02£ 8.42£
10 - 19 6.86£ 8.23£
20 - 26 6.69£ 8.03£
Quantity U.P
1 - 1 8.26£ 9.91£
2 - 2 7.85£ 9.42£
3 - 4 7.43£ 8.92£
5 - 9 7.02£ 8.42£
10 - 19 6.86£ 8.23£
20 - 26 6.69£ 8.03£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 26
Set of 1

N-channel transistor, 50A, 150uA, 92 Ohms, TO-220, TO-220, 300V - IXTP50N25T. N-channel transistor, 50A, 150uA, 92 Ohms, TO-220, TO-220, 300V. ID (T=25°C): 50A. Idss (max): 150uA. On-resistance Rds On: 92 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 300V. C(in): 4000pF. Cost): 420pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. Id(imp): 130A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 97 ns. Td(on): 24 ns. Technology: PolarHT Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 21/04/2025, 20:25.

Technical documentation

Equivalent products :

Quantity in stock : 7
IXTQ36N30P

IXTQ36N30P

N-channel transistor, 36A, 36A, 200uA, 92m Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 300V. ID (T=100°C)...
IXTQ36N30P
N-channel transistor, 36A, 36A, 200uA, 92m Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 300V. ID (T=100°C): 36A. ID (T=25°C): 36A. Idss (max): 200uA. On-resistance Rds On: 92m Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 300V. C(in): 2250pF. Cost): 370pF. Channel type: N. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. Id(imp): 90A. IDss (min): 1uA. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 97 ns. Td(on): 24 ns. Technology: PolarHT Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
IXTQ36N30P
N-channel transistor, 36A, 36A, 200uA, 92m Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 300V. ID (T=100°C): 36A. ID (T=25°C): 36A. Idss (max): 200uA. On-resistance Rds On: 92m Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 300V. C(in): 2250pF. Cost): 370pF. Channel type: N. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. Id(imp): 90A. IDss (min): 1uA. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 97 ns. Td(on): 24 ns. Technology: PolarHT Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
Set of 1
8.35£ VAT incl.
(6.96£ excl. VAT)
8.35£

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