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N-channel transistor, 32A, TO-247, TO-247 ( AD ) HiPerFAST IGBT, 600V - IXGH32N60BU1

N-channel transistor, 32A, TO-247, TO-247 ( AD ) HiPerFAST IGBT, 600V - IXGH32N60BU1
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Quantity excl. VAT VAT incl.
1 - 1 14.80£ 17.76£
2 - 2 14.06£ 16.87£
3 - 4 13.76£ 16.51£
5 - 9 13.32£ 15.98£
10 - 14 13.02£ 15.62£
15 - 19 12.58£ 15.10£
20 - 23 12.13£ 14.56£
Quantity U.P
1 - 1 14.80£ 17.76£
2 - 2 14.06£ 16.87£
3 - 4 13.76£ 16.51£
5 - 9 13.32£ 15.98£
10 - 14 13.02£ 15.62£
15 - 19 12.58£ 15.10£
20 - 23 12.13£ 14.56£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 23
Set of 1

N-channel transistor, 32A, TO-247, TO-247 ( AD ) HiPerFAST IGBT, 600V - IXGH32N60BU1. N-channel transistor, 32A, TO-247, TO-247 ( AD ) HiPerFAST IGBT, 600V. Ic(T=100°C): 32A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AD ) HiPerFAST IGBT. Collector/emitter voltage Vceo: 600V. C(in): 2700pF. Cost): 270pF. CE diode: yes. Channel type: N. Trr Diode (Min.): 120ns. Function: Ic 60A @ 25°C, 32A @ 90°C, Icm 120A (pulsed). Collector current: 60A. Ic(pulse): 60.4k Ohms. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 25 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V. Original product from manufacturer IXYS. Quantity in stock updated on 08/06/2025, 10:25.

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