Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 10.36£ | 12.43£ |
2 - 2 | 9.84£ | 11.81£ |
3 - 4 | 9.33£ | 11.20£ |
5 - 9 | 8.81£ | 10.57£ |
10 - 14 | 8.60£ | 10.32£ |
15 - 19 | 8.39£ | 10.07£ |
20 - 36 | 8.08£ | 9.70£ |
Quantity | U.P | |
---|---|---|
1 - 1 | 10.36£ | 12.43£ |
2 - 2 | 9.84£ | 11.81£ |
3 - 4 | 9.33£ | 11.20£ |
5 - 9 | 8.81£ | 10.57£ |
10 - 14 | 8.60£ | 10.32£ |
15 - 19 | 8.39£ | 10.07£ |
20 - 36 | 8.08£ | 9.70£ |
N-channel transistor, 24A, TO-247, TO-247 ( AD ), 600V - IXGH24N60CD1. N-channel transistor, 24A, TO-247, TO-247 ( AD ), 600V. Ic(T=100°C): 24A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AD ). Collector/emitter voltage Vceo: 600V. C(in): 1500pF. Cost): 170pF. Channel type: N. Trr Diode (Min.): 130 ns. Function: HiPerFAST IGBT with Diode. Collector current: 48A. Ic(pulse): 80A. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Td(off): 75 ns. Td(on): 15 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.1V. Maximum saturation voltage VCE(sat): 2.5V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5.5V. Note: HiPerFAST IGBT transistor. CE diode: yes. Germanium diode: no. Quantity in stock updated on 21/04/2025, 21:25.
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