Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.89£ | 1.07£ |
5 - 9 | 0.85£ | 1.02£ |
10 - 24 | 0.80£ | 0.96£ |
25 - 49 | 0.76£ | 0.91£ |
50 - 99 | 0.74£ | 0.89£ |
100 - 249 | 0.67£ | 0.80£ |
250 - 977 | 0.64£ | 0.77£ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.89£ | 1.07£ |
5 - 9 | 0.85£ | 1.02£ |
10 - 24 | 0.80£ | 0.96£ |
25 - 49 | 0.76£ | 0.91£ |
50 - 99 | 0.74£ | 0.89£ |
100 - 249 | 0.67£ | 0.80£ |
250 - 977 | 0.64£ | 0.77£ |
N-channel transistor, 21A, 30A, 250uA, 0.035 Ohms, TO-220, TO-220AB, 55V - IRLZ34N. N-channel transistor, 21A, 30A, 250uA, 0.035 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 21A. ID (T=25°C): 30A. Idss (max): 250uA. On-resistance Rds On: 0.035 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 880pF. Cost): 220pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 76 ns. Type of transistor: MOSFET. Function: Gate control by logic level. Id(imp): 110A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 68W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 21 ns. Td(on): 8.9 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 16V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 21/04/2025, 20:25.
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