Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.83£ | 2.20£ |
5 - 9 | 1.74£ | 2.09£ |
10 - 24 | 1.64£ | 1.97£ |
25 - 49 | 1.55£ | 1.86£ |
50 - 74 | 1.52£ | 1.82£ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.83£ | 2.20£ |
5 - 9 | 1.74£ | 2.09£ |
10 - 24 | 1.64£ | 1.97£ |
25 - 49 | 1.55£ | 1.86£ |
50 - 74 | 1.52£ | 1.82£ |
N-channel transistor, 113A, 160A, 150uA, 2.4M Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 30 v - IRLR8743. N-channel transistor, 113A, 160A, 150uA, 2.4M Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 30 v. ID (T=100°C): 113A. ID (T=25°C): 160A. Idss (max): 150uA. On-resistance Rds On: 2.4M Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 30 v. C(in): 4880pF. Cost): 950pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 18 ns. Type of transistor: MOSFET. Function: Gate control by logic level. Id(imp): 640A. IDss (min): 1uA. Number of terminals: 2. Pd (Power Dissipation, Max): 135W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 21 ns. Td(on): 19 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.35V. Vgs(th) min.: 1.35V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 21/04/2025, 20:25.
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