Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.52£ | 0.62£ |
10 - 24 | 0.49£ | 0.59£ |
25 - 49 | 0.47£ | 0.56£ |
50 - 98 | 0.44£ | 0.53£ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.52£ | 0.62£ |
10 - 24 | 0.49£ | 0.59£ |
25 - 49 | 0.47£ | 0.56£ |
50 - 98 | 0.44£ | 0.53£ |
N-channel transistor, 61A, 86A, 150uA, 4m Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 30 v - IRLR8726TRPBF. N-channel transistor, 61A, 86A, 150uA, 4m Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 30 v. ID (T=100°C): 61A. ID (T=25°C): 86A. Idss (max): 150uA. On-resistance Rds On: 4m Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 30 v. C(in): 2150pF. Cost): 480pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 24 ns. Type of transistor: MOSFET. Function: Very low RDS on-resistance at 4.5V VGS. Id(imp): 340A. IDss (min): 1uA. Equivalents: IRLR8726PBF, IRLR8726TRLPBF. Number of terminals: 2. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 15 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.35V. Vgs(th) min.: 1.35V. Spec info: Ultra-Low Gate Impedance. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 21/04/2025, 21:25.
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