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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 113A, 161A, 150uA, 2.6m Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 30 v - IRLR7843

N-channel transistor, 113A, 161A, 150uA, 2.6m Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 30 v - IRLR7843
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Quantity excl. VAT VAT incl.
1 - 4 1.22£ 1.46£
5 - 9 1.16£ 1.39£
10 - 24 1.10£ 1.32£
25 - 49 1.04£ 1.25£
50 - 99 1.01£ 1.21£
100 - 249 0.99£ 1.19£
250 - 1610 0.94£ 1.13£
Quantity U.P
1 - 4 1.22£ 1.46£
5 - 9 1.16£ 1.39£
10 - 24 1.10£ 1.32£
25 - 49 1.04£ 1.25£
50 - 99 1.01£ 1.21£
100 - 249 0.99£ 1.19£
250 - 1610 0.94£ 1.13£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 1610
Set of 1

N-channel transistor, 113A, 161A, 150uA, 2.6m Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 30 v - IRLR7843. N-channel transistor, 113A, 161A, 150uA, 2.6m Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 30 v. ID (T=100°C): 113A. ID (T=25°C): 161A. Idss (max): 150uA. On-resistance Rds On: 2.6m Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 30 v. C(in): 4380pF. Cost): 940pF. Channel type: N. Conditioning: roll. Conditioning unit: 2000. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 39 ns. Type of transistor: MOSFET. Id(imp): 620A. IDss (min): 1uA. Marking on the case: LR7843. Number of terminals: 2. Pd (Power Dissipation, Max): 140W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 34 ns. Td(on): 25 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.3V. Vgs(th) min.: 1.5V. Function: Very Low RDS(on) at 4.5V VGS, Ultra-Low Gate Impedance. G-S Protection: no. Quantity in stock updated on 21/04/2025, 20:25.

Technical documentation

Equivalent products :

Quantity in stock : 74
IRLR8743

IRLR8743

N-channel transistor, 113A, 160A, 150uA, 2.4M Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), ...
IRLR8743
N-channel transistor, 113A, 160A, 150uA, 2.4M Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 30 v. ID (T=100°C): 113A. ID (T=25°C): 160A. Idss (max): 150uA. On-resistance Rds On: 2.4M Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 30 v. C(in): 4880pF. Cost): 950pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 18 ns. Type of transistor: MOSFET. Function: Gate control by logic level. Id(imp): 640A. IDss (min): 1uA. Number of terminals: 2. Pd (Power Dissipation, Max): 135W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 21 ns. Td(on): 19 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.35V. Vgs(th) min.: 1.35V. Drain-source protection : yes. G-S Protection: no
IRLR8743
N-channel transistor, 113A, 160A, 150uA, 2.4M Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 30 v. ID (T=100°C): 113A. ID (T=25°C): 160A. Idss (max): 150uA. On-resistance Rds On: 2.4M Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 30 v. C(in): 4880pF. Cost): 950pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 18 ns. Type of transistor: MOSFET. Function: Gate control by logic level. Id(imp): 640A. IDss (min): 1uA. Number of terminals: 2. Pd (Power Dissipation, Max): 135W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 21 ns. Td(on): 19 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.35V. Vgs(th) min.: 1.35V. Drain-source protection : yes. G-S Protection: no
Set of 1
2.20£ VAT incl.
(1.83£ excl. VAT)
2.20£

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