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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 13A, 20A, 250uA, 0.27 Ohms, TO-247, TO-247AC, 500V - IRFP460

N-channel transistor, 13A, 20A, 250uA, 0.27 Ohms, TO-247, TO-247AC, 500V - IRFP460
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Quantity excl. VAT VAT incl.
1 - 1 5.14£ 6.17£
2 - 2 4.88£ 5.86£
3 - 4 4.63£ 5.56£
5 - 9 4.37£ 5.24£
10 - 19 4.27£ 5.12£
20 - 29 4.16£ 4.99£
30 - 99 4.01£ 4.81£
Quantity U.P
1 - 1 5.14£ 6.17£
2 - 2 4.88£ 5.86£
3 - 4 4.63£ 5.56£
5 - 9 4.37£ 5.24£
10 - 19 4.27£ 5.12£
20 - 29 4.16£ 4.99£
30 - 99 4.01£ 4.81£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 99
Set of 1

N-channel transistor, 13A, 20A, 250uA, 0.27 Ohms, TO-247, TO-247AC, 500V - IRFP460. N-channel transistor, 13A, 20A, 250uA, 0.27 Ohms, TO-247, TO-247AC, 500V. ID (T=100°C): 13A. ID (T=25°C): 20A. Idss (max): 250uA. On-resistance Rds On: 0.27 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 500V. C(in): 4200pF. Cost): 870pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 570 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 80A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 280W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET, High Efficiency Synchronous R. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 22/04/2025, 07:25.

Technical documentation

Equivalent products :

Out of stock
2SK1170

2SK1170

N-channel transistor, 20A, 250uA, 0.27 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 500V. ID (T=25°C): 20A...
2SK1170
N-channel transistor, 20A, 250uA, 0.27 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 500V. ID (T=25°C): 20A. Idss (max): 250uA. On-resistance Rds On: 0.27 Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 500V. C(in): 2800pF. Cost): 780pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 80A. Number of terminals: 3. Pd (Power Dissipation, Max): 120W. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 32 ns. Technology: V-MOS. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Spec info: High speed switching Low drive current. G-S Protection: yes
2SK1170
N-channel transistor, 20A, 250uA, 0.27 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 500V. ID (T=25°C): 20A. Idss (max): 250uA. On-resistance Rds On: 0.27 Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 500V. C(in): 2800pF. Cost): 780pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 80A. Number of terminals: 3. Pd (Power Dissipation, Max): 120W. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 32 ns. Technology: V-MOS. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Spec info: High speed switching Low drive current. G-S Protection: yes
Set of 1
10.98£ VAT incl.
(9.15£ excl. VAT)
10.98£

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