Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.33£ | 2.80£ |
5 - 9 | 2.21£ | 2.65£ |
10 - 24 | 2.10£ | 2.52£ |
25 - 49 | 1.98£ | 2.38£ |
50 - 93 | 1.93£ | 2.32£ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.33£ | 2.80£ |
5 - 9 | 2.21£ | 2.65£ |
10 - 24 | 2.10£ | 2.52£ |
25 - 49 | 1.98£ | 2.38£ |
50 - 93 | 1.93£ | 2.32£ |
N-channel transistor, 90A, 128A, 250uA, 0.0046 Ohm, TO-220, TO-220AB, 75V - IRFB3307Z. N-channel transistor, 90A, 128A, 250uA, 0.0046 Ohm, TO-220, TO-220AB, 75V. ID (T=100°C): 90A. ID (T=25°C): 128A. Idss (max): 250uA. On-resistance Rds On: 0.0046 Ohm. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 75V. C(in): 4750pF. Cost): 420pF. Channel type: N. Conditioning: plastic tube. Quantity per case: 1. Trr Diode (Min.): 33 ns. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. Id(imp): 512A. IDss (min): 20uA. Pd (Power Dissipation, Max): 230W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 38 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 21/04/2025, 23:25.
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