N-channel transistor, 9.2A, 13A, 150uA, SO, SO-8, 30 v, 0.008 Ohms - IRF7413Z

N-channel transistor, 9.2A, 13A, 150uA, SO, SO-8, 30 v, 0.008 Ohms - IRF7413Z. N-channel transistor, 9.2A, 13A, 150uA, SO, SO-8, 30 v, 0.008 Ohms. ID (T=100°C): 9.2A. ID (T=25°C): 13A. Idss (max): 150uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. On-resistance Rds On: 0.008 Ohms. C(in): 1210pF. Cost): 270pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 24 ns. Type of transistor: MOSFET. Function: Ultra-Low Gate Impedance. Id(imp): 100A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 11 ns. Td(on): 8.7 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.25V. Vgs(th) min.: 1.35V. Quantity per case: 1. Conditioning unit: 95. G-S Protection: no. Quantity in stock updated on 21/04/2025, 20:25.