N-channel transistor, 80A, 110A, 250nA, 0.008 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 55V - IRF3205S

N-channel transistor, 80A, 110A, 250nA, 0.008 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 55V - IRF3205S. N-channel transistor, 80A, 110A, 250nA, 0.008 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 55V. ID (T=100°C): 80A. ID (T=25°C): 110A. Idss (max): 250nA. On-resistance Rds On: 0.008 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 55V. C(in): 3247pF. Cost): 781pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 69 ns. Type of transistor: MOSFET. Function: 'Advanced Process Technology'. Id(imp): 390A. IDss (min): 25nA. Equivalents: IRF3205SPBF. Number of terminals: 2. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 50 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 02/05/2025, 19:25.