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N-channel transistor, 75A, TO-247, TO-247 ( AC ), 600V - IGW75N60H3

N-channel transistor, 75A, TO-247, TO-247 ( AC ), 600V - IGW75N60H3
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Quantity excl. VAT VAT incl.
1 - 1 11.16£ 13.39£
2 - 2 10.60£ 12.72£
3 - 4 10.38£ 12.46£
5 - 9 10.05£ 12.06£
10 - 14 9.82£ 11.78£
15 - 19 9.49£ 11.39£
20 - 26 9.15£ 10.98£
Quantity U.P
1 - 1 11.16£ 13.39£
2 - 2 10.60£ 12.72£
3 - 4 10.38£ 12.46£
5 - 9 10.05£ 12.06£
10 - 14 9.82£ 11.78£
15 - 19 9.49£ 11.39£
20 - 26 9.15£ 10.98£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 26
Set of 1

N-channel transistor, 75A, TO-247, TO-247 ( AC ), 600V - IGW75N60H3. N-channel transistor, 75A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 75A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 4620pF. Cost): 240pF. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Function: Very low VCEsat. Germanium diode: no. Collector current: 140A. Ic(pulse): 225A. Marking on the case: G75H603. Number of terminals: 3. Pd (Power Dissipation, Max): 428W. RoHS: yes. Spec info: 'Trench and Fieldstop' technology IGBT transistor. Delivery time: KB. Assembly/installation: PCB through-hole mounting. Td(off): 265 ns. Td(on): 31 ns. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.85V. Maximum saturation voltage VCE(sat): 2.25V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.1V. Gate/emitter voltage VGE(th)max.: 5.7V. Original product from manufacturer Infineon Technologies. Quantity in stock updated on 08/06/2025, 07:25.

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