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N-channel transistor, 13A, 250uA, 0.09 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-252AA ), 55V - HUF75307D3S

N-channel transistor, 13A, 250uA, 0.09 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-252AA ), 55V - HUF75307D3S
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Quantity excl. VAT VAT incl.
1 - 4 0.82£ 0.98£
5 - 9 0.78£ 0.94£
10 - 24 0.74£ 0.89£
25 - 49 0.70£ 0.84£
50 - 99 0.68£ 0.82£
100 - 108 0.67£ 0.80£
Quantity U.P
1 - 4 0.82£ 0.98£
5 - 9 0.78£ 0.94£
10 - 24 0.74£ 0.89£
25 - 49 0.70£ 0.84£
50 - 99 0.68£ 0.82£
100 - 108 0.67£ 0.80£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 108
Set of 1

N-channel transistor, 13A, 250uA, 0.09 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-252AA ), 55V - HUF75307D3S. N-channel transistor, 13A, 250uA, 0.09 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-252AA ), 55V. ID (T=25°C): 13A. Idss (max): 250uA. On-resistance Rds On: 0.09 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-252AA ). Voltage Vds(max): 55V. C(in): 250pF. Cost): 100pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 45 ns. Type of transistor: MOSFET. IDss (min): 1uA. Marking on the case: 75307D. Pd (Power Dissipation, Max): 35W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 35 ns. Td(on): 7 ns. Technology: UltraFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 21/04/2025, 06:25.

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