Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 4.77£ | 5.72£ |
2 - 2 | 4.53£ | 5.44£ |
3 - 4 | 4.30£ | 5.16£ |
5 - 9 | 4.06£ | 4.87£ |
10 - 19 | 3.96£ | 4.75£ |
20 - 29 | 3.87£ | 4.64£ |
30 - 47 | 3.72£ | 4.46£ |
Quantity | U.P | |
---|---|---|
1 - 1 | 4.77£ | 5.72£ |
2 - 2 | 4.53£ | 5.44£ |
3 - 4 | 4.30£ | 5.16£ |
5 - 9 | 4.06£ | 4.87£ |
10 - 19 | 3.96£ | 4.75£ |
20 - 29 | 3.87£ | 4.64£ |
30 - 47 | 3.72£ | 4.46£ |
N-channel transistor, 17A, TO-247, TO-247, 1200V - HGTG10N120BND. N-channel transistor, 17A, TO-247, TO-247, 1200V. Ic(T=100°C): 17A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 1200V. Channel type: N. Conditioning: plastic tube. Collector current: 35A. Ic(pulse): 80A. Marking on the case: 10N120BND. Pd (Power Dissipation, Max): 298W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 165 ns. Td(on): 23 ns. Technology: NPT series IGBT transistor with anti-parallel hyperfast diode. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.45V. Maximum saturation voltage VCE(sat): 2.7V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 6V. Gate/emitter voltage VGE(th)max.: 6.8V. Number of terminals: 3. Conditioning unit: 30. CE diode: yes. Germanium diode: no. Quantity in stock updated on 21/04/2025, 07:25.
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