N-channel transistor, 18A, TO-3P( N )IS, TO-3P, 600V - GT35J321

N-channel transistor, 18A, TO-3P( N )IS, TO-3P, 600V - GT35J321. N-channel transistor, 18A, TO-3P( N )IS, TO-3P, 600V. Ic(T=100°C): 18A. Housing: TO-3P( N )IS. Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 600V. CE diode: yes. Channel type: N. Function: High Power Switching Applications. Germanium diode: no. Collector current: 37A. Ic(pulse): 100A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 75W. RoHS: yes. Spec info: insulated gate bipolar transistor (IGBT). Assembly/installation: PCB through-hole mounting. Td(off): 0.51 ns. Td(on): 0.33 ns. Saturation voltage VCE(sat): 1.9V. Maximum saturation voltage VCE(sat): 2.3V. Gate/emitter voltage VGE: 25V. Original product from manufacturer Toshiba. Quantity in stock updated on 08/06/2025, 08:25.