N-channel transistor, 75A, Other, Other, 1200V - FS75R12KE3GBOSA1

Quantity	excl. VAT	VAT incl.
1 - 1	204.13£	244.96£
2 - 2	193.93£	232.72£
3 - 4	183.72£	220.46£
5 - 9	173.51£	208.21£
10 - 14	169.43£	203.32£
15 - 19	165.35£	198.42£
20+	163.31£	195.97£

Quantity	U.P
1 - 1	204.13£	244.96£
2 - 2	193.93£	232.72£
3 - 4	183.72£	220.46£
5 - 9	173.51£	208.21£
10 - 14	169.43£	203.32£
15 - 19	165.35£	198.42£
20+	163.31£	195.97£

Delivery in 2-3 days, with postal tracking!

Out of stock

Set of 1

N-channel transistor, 75A, Other, Other, 1200V - FS75R12KE3GBOSA1. N-channel transistor, 75A, Other, Other, 1200V. Ic(T=100°C): 75A. Housing: Other. Housing (according to data sheet): Other. Collector/emitter voltage Vceo: 1200V. C(in): 5300pF. Channel type: N. Collector current: 100A. Ic(pulse): 150A. Marking on the case: FS75R12KE3G. Dimensions: 122x62x17.5mm. Pd (Power Dissipation, Max): 355W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 42us. Td(on): 26us. Operating temperature: -40...+125°C. Saturation voltage VCE(sat): 1.65V. Maximum saturation voltage VCE(sat): 2.15V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.5V. Gate/emitter voltage VGE(th)max.: 6.5V. Function: ICRM 150A Tp=1ms. Number of terminals: 35. Note: 6x IGBT+ CE Diode. CE diode: yes. Germanium diode: no. Quantity in stock updated on 21/04/2025, 05:25.