Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.83£ | 2.20£ |
5 - 9 | 1.74£ | 2.09£ |
10 - 24 | 1.64£ | 1.97£ |
25 - 49 | 1.55£ | 1.86£ |
50 - 99 | 1.52£ | 1.82£ |
100 - 249 | 0.84£ | 1.01£ |
250 - 704 | 0.32£ | 0.38£ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.83£ | 2.20£ |
5 - 9 | 1.74£ | 2.09£ |
10 - 24 | 1.64£ | 1.97£ |
25 - 49 | 1.55£ | 1.86£ |
50 - 99 | 1.52£ | 1.82£ |
100 - 249 | 0.84£ | 1.01£ |
250 - 704 | 0.32£ | 0.38£ |
N-channel transistor, 5.1A, 8A, 100uA, 1.29 Ohms, TO-220FP, TO-220F, 800V - FQPF8N80C. N-channel transistor, 5.1A, 8A, 100uA, 1.29 Ohms, TO-220FP, TO-220F, 800V. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 100uA. On-resistance Rds On: 1.29 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 800V. C(in): 1580pF. Cost): 135pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 690 ns. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 35nC, Low Crss 13pF. Production date: 201432. Id(imp): 32A. IDss (min): 10uA. Pd (Power Dissipation, Max): 59W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 65 ns. Td(on): 40 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. G-S Protection: no. Quantity in stock updated on 21/04/2025, 04:25.
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