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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 7A, 11A, 100uA, 0.48 Ohms, TO-220FP, TO-220FP, 500V - FQPF11N50CF

N-channel transistor, 7A, 11A, 100uA, 0.48 Ohms, TO-220FP, TO-220FP, 500V - FQPF11N50CF
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 2.92£ 3.50£
5 - 9 2.77£ 3.32£
10 - 24 2.62£ 3.14£
25 - 49 2.48£ 2.98£
50 - 53 2.42£ 2.90£
Quantity U.P
1 - 4 2.92£ 3.50£
5 - 9 2.77£ 3.32£
10 - 24 2.62£ 3.14£
25 - 49 2.48£ 2.98£
50 - 53 2.42£ 2.90£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 53
Set of 1

N-channel transistor, 7A, 11A, 100uA, 0.48 Ohms, TO-220FP, TO-220FP, 500V - FQPF11N50CF. N-channel transistor, 7A, 11A, 100uA, 0.48 Ohms, TO-220FP, TO-220FP, 500V. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 100uA. On-resistance Rds On: 0.48 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 500V. C(in): 1515pF. Cost): 185pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 90 ns. Type of transistor: MOSFET. Id(imp): 44A. IDss (min): 10uA. Pd (Power Dissipation, Max): 48W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 120ns. Td(on): 24 ns. Technology: QFET ® FRFET ® MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Function: Fast switch, Low gate charge 43nC, Low Crss 20pF. G-S Protection: no. Quantity in stock updated on 21/04/2025, 05:25.

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Quantity in stock : 323
SPA11N80C3

SPA11N80C3

N-channel transistor, 7.1A, 11A, 200uA, 0.39 Ohms, TO-220FP, TO-220FP-3-1, 800V. ID (T=100°C): 7.1A...
SPA11N80C3
N-channel transistor, 7.1A, 11A, 200uA, 0.39 Ohms, TO-220FP, TO-220FP-3-1, 800V. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 200uA. On-resistance Rds On: 0.39 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP-3-1. Voltage Vds(max): 800V. C(in): 1600pF. Cost): 800pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. Id(imp): 33A. IDss (min): 0.5uA. Marking on the case: 11N80C3. Pd (Power Dissipation, Max): 41W. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool MOS™ Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Spec info: Fully isolated package (2500VAC /1 minute). Drain-source protection : yes. G-S Protection: no
SPA11N80C3
N-channel transistor, 7.1A, 11A, 200uA, 0.39 Ohms, TO-220FP, TO-220FP-3-1, 800V. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 200uA. On-resistance Rds On: 0.39 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP-3-1. Voltage Vds(max): 800V. C(in): 1600pF. Cost): 800pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. Id(imp): 33A. IDss (min): 0.5uA. Marking on the case: 11N80C3. Pd (Power Dissipation, Max): 41W. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool MOS™ Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Spec info: Fully isolated package (2500VAC /1 minute). Drain-source protection : yes. G-S Protection: no
Set of 1
4.21£ VAT incl.
(3.51£ excl. VAT)
4.21£

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RFT-6-3A

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Max Continuous current: 6.3A. Fuse properties: time delay fuse (T). Voltage: 250V. Pitch: 5.1mm. D...
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FQPF3N80C

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