N-channel transistor, 11.4A, 18A, 500uA, 61m Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 150V - FDD770N15A

N-channel transistor, 11.4A, 18A, 500uA, 61m Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 150V - FDD770N15A. N-channel transistor, 11.4A, 18A, 500uA, 61m Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 150V. ID (T=100°C): 11.4A. ID (T=25°C): 18A. Idss (max): 500uA. On-resistance Rds On: 61m Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 150V. C(in): 575pF. Cost): 64pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 56.4 ns. Type of transistor: MOSFET. Id(imp): 36A. IDss (min): 1uA. Note: High performance trench technology. Number of terminals: 2. Pd (Power Dissipation, Max): 56.8W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 15.8 ns. Td(on): 10.3 ns. Technology: PowerTrench MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Function: Vitesse de commutation rapide, faible charge de grille. Spec info: extremely low RDS(on) resistance. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 21/04/2025, 03:25.