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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 35A, 59A, 10uA, 0.041 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3PN, 250V - FDA59N25

N-channel transistor, 35A, 59A, 10uA, 0.041 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3PN, 250V - FDA59N25
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Quantity excl. VAT VAT incl.
1 - 1 4.47£ 5.36£
2 - 2 4.24£ 5.09£
3 - 4 4.02£ 4.82£
5 - 9 3.80£ 4.56£
10 - 19 3.71£ 4.45£
20 - 29 3.62£ 4.34£
30 - 76 3.48£ 4.18£
Quantity U.P
1 - 1 4.47£ 5.36£
2 - 2 4.24£ 5.09£
3 - 4 4.02£ 4.82£
5 - 9 3.80£ 4.56£
10 - 19 3.71£ 4.45£
20 - 29 3.62£ 4.34£
30 - 76 3.48£ 4.18£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 76
Set of 1

N-channel transistor, 35A, 59A, 10uA, 0.041 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3PN, 250V - FDA59N25. N-channel transistor, 35A, 59A, 10uA, 0.041 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3PN, 250V. ID (T=100°C): 35A. ID (T=25°C): 59A. Idss (max): 10uA. On-resistance Rds On: 0.041 Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 250V. C(in): 3090pF. Cost): 630pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 190 ns. Type of transistor: MOSFET. Function: PDP TV, AC/DC Converter. Id(imp): 236A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 392W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 70 ns. Technology: UniFET MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 21/04/2025, 03:25.

Technical documentation

Equivalent products :

Quantity in stock : 41
IRFP4227

IRFP4227

N-channel transistor, 46A, 65A, 1mA, 0.021 Ohms, TO-247, TO-247AC, 200V. ID (T=100°C): 46A. ID (T=2...
IRFP4227
N-channel transistor, 46A, 65A, 1mA, 0.021 Ohms, TO-247, TO-247AC, 200V. ID (T=100°C): 46A. ID (T=25°C): 65A. Idss (max): 1mA. On-resistance Rds On: 0.021 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 200V. C(in): 4600pF. Cost): 460pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: PDP MOSFET. Id(imp): 260A. IDss (min): 20uA. Number of terminals: 3. Temperature: +175°C. Pd (Power Dissipation, Max): 330W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 21 ns. Td(on): 33 ns. Technology: HEXFET Power-MOSFET, PDP SWITCH. Operating temperature: -40...+175°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: no
IRFP4227
N-channel transistor, 46A, 65A, 1mA, 0.021 Ohms, TO-247, TO-247AC, 200V. ID (T=100°C): 46A. ID (T=25°C): 65A. Idss (max): 1mA. On-resistance Rds On: 0.021 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 200V. C(in): 4600pF. Cost): 460pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: PDP MOSFET. Id(imp): 260A. IDss (min): 20uA. Number of terminals: 3. Temperature: +175°C. Pd (Power Dissipation, Max): 330W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 21 ns. Td(on): 33 ns. Technology: HEXFET Power-MOSFET, PDP SWITCH. Operating temperature: -40...+175°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: no
Set of 1
5.20£ VAT incl.
(4.33£ excl. VAT)
5.20£

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