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N-channel transistor, 9.9A, 16.5A, 10uA, 0.31 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 500V - FDA16N50-F109

N-channel transistor, 9.9A, 16.5A, 10uA, 0.31 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 500V - FDA16N50-F109
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Quantity excl. VAT VAT incl.
1 - 4 4.17£ 5.00£
5 - 9 3.96£ 4.75£
10 - 24 3.76£ 4.51£
25 - 40 3.55£ 4.26£
Quantity U.P
1 - 4 4.17£ 5.00£
5 - 9 3.96£ 4.75£
10 - 24 3.76£ 4.51£
25 - 40 3.55£ 4.26£
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Quantity in stock : 40
Set of 1

N-channel transistor, 9.9A, 16.5A, 10uA, 0.31 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 500V - FDA16N50-F109. N-channel transistor, 9.9A, 16.5A, 10uA, 0.31 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 500V. ID (T=100°C): 9.9A. ID (T=25°C): 16.5A. Idss (max): 10uA. On-resistance Rds On: 0.31 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 500V. C(in): 1495pF. Cost): 235pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 490 ns. Type of transistor: MOSFET. Function: PDP TV, Uninterruptible Power Supply. Id(imp): 66A. IDss (min): 1uA. Marking on the case: FDA16N50. Number of terminals: 3. Pd (Power Dissipation, Max): 205W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 65 ns. Td(on): 40 ns. Technology: UniFET MOSFET, DMOS technology. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Spec info: Low Gate Charge. G-S Protection: no. Quantity in stock updated on 21/04/2025, 03:25.

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