N-channel transistor, 32A, 42A, 42A, 0.028 Ohms, 50V - BUZ12
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 4 | 2.79£ | 3.35£ |
| 5 - 9 | 2.65£ | 3.18£ |
| 10 - 24 | 2.56£ | 3.07£ |
| 25 - 49 | 2.51£ | 3.01£ |
| 50 - 99 | 2.45£ | 2.94£ |
| 100 - 249 | 2.37£ | 2.84£ |
| 250+ | 2.28£ | 2.74£ |
| Quantity | U.P | |
|---|---|---|
| 1 - 4 | 2.79£ | 3.35£ |
| 5 - 9 | 2.65£ | 3.18£ |
| 10 - 24 | 2.56£ | 3.07£ |
| 25 - 49 | 2.51£ | 3.01£ |
| 50 - 99 | 2.45£ | 2.94£ |
| 100 - 249 | 2.37£ | 2.84£ |
| 250+ | 2.28£ | 2.74£ |
Delivery in 2-3 days, with postal tracking!
N-channel transistor, 32A, 42A, 42A, 0.028 Ohms, 50V - BUZ12. N-channel transistor, 32A, 42A, 42A, 0.028 Ohms, 50V. ID (T=100°C): 32A. ID (T=25°C): 42A. Idss (max): 42A. On-resistance Rds On: 0.028 Ohms. Voltage Vds(max): 50V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 125W. Technology: V-MOS. Original product from manufacturer Siemens. Quantity in stock updated on 08/06/2025, 00:25.
Equivalent products :
IRFZ44N
N-channel transistor, 35A, 49A, 250uA, 0.0175 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 35A. ID (T...
N-channel transistor, 35A, 49A, 250uA, 0.0175 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 35A. ID (T=25°C): 49A. Idss (max): 250uA. On-resistance Rds On: 0.0175 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 1470pF. Cost): 360pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 63us. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. G-S Protection: no. Id(imp): 160A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 94W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 44 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V
N-channel transistor, 35A, 49A, 250uA, 0.0175 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 35A. ID (T=25°C): 49A. Idss (max): 250uA. On-resistance Rds On: 0.0175 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 1470pF. Cost): 360pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 63us. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. G-S Protection: no. Id(imp): 160A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 94W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 44 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V
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