N-channel transistor, 27A, TO-247, TO-247, 600V - APT15GP60BDQ1G
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 1 | 10.10£ | 12.12£ |
| 2 - 2 | 9.59£ | 11.51£ |
| 3 - 4 | 9.09£ | 10.91£ |
| 5 - 9 | 8.58£ | 10.30£ |
| 10 - 13 | 8.38£ | 10.06£ |
| Quantity | U.P | |
|---|---|---|
| 1 - 1 | 10.10£ | 12.12£ |
| 2 - 2 | 9.59£ | 11.51£ |
| 3 - 4 | 9.09£ | 10.91£ |
| 5 - 9 | 8.58£ | 10.30£ |
| 10 - 13 | 8.38£ | 10.06£ |
N-channel transistor, 27A, TO-247, TO-247, 600V - APT15GP60BDQ1G. N-channel transistor, 27A, TO-247, TO-247, 600V. Ic(T=100°C): 27A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 600V. C(in): 1685pF. Cost): 210pF. Channel type: N. Trr Diode (Min.): 55ms. Function: High frequency switch mode power supplies. Collector current: 56A. Ic(pulse): 65A. Pd (Power Dissipation, Max): 250W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 29 ns. Td(on): 8 ns. Technology: POWER MOS 7® IGBT. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.2V. Maximum saturation voltage VCE(sat): 2.7V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. CE diode: yes. Germanium diode: no. Quantity in stock updated on 20/04/2025, 23:25.
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