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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 4A, 1mA, 2 Ohms, TO-220FP, TO-220FI, 600V - 2SK2625LS

N-channel transistor, 4A, 1mA, 2 Ohms, TO-220FP, TO-220FI, 600V - 2SK2625LS
Quantity excl. VAT VAT incl.
1 - 1 5.04£ 6.05£
2 - 2 4.79£ 5.75£
3 - 4 4.53£ 5.44£
5 - 9 4.28£ 5.14£
Quantity U.P
1 - 1 5.04£ 6.05£
2 - 2 4.79£ 5.75£
3 - 4 4.53£ 5.44£
5 - 9 4.28£ 5.14£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 9
Set of 1

N-channel transistor, 4A, 1mA, 2 Ohms, TO-220FP, TO-220FI, 600V - 2SK2625LS. N-channel transistor, 4A, 1mA, 2 Ohms, TO-220FP, TO-220FI, 600V. ID (T=25°C): 4A. Idss (max): 1mA. On-resistance Rds On: 2 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FI. Voltage Vds(max): 600V. C(in): 700pF. Cost): 220pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 25 ns. Type of transistor: MOSFET. Function: Ultrahigh-Speed Switching. Id(imp): 16A. Marking on the case: K2625. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 20 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) min.: 3.5V. Vgs(th) max.: 5V. Vgs(th) min.: 3.5V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 20/04/2025, 15:25.

Technical documentation

Equivalent products :

Quantity in stock : 296
FQPF5N60C

FQPF5N60C

N-channel transistor, 2.6A, 4.5A, 10uA, 2 Ohms, TO-220FP, TO-220F, 600V. ID (T=100°C): 2.6A. ID (T=...
FQPF5N60C
N-channel transistor, 2.6A, 4.5A, 10uA, 2 Ohms, TO-220FP, TO-220F, 600V. ID (T=100°C): 2.6A. ID (T=25°C): 4.5A. Idss (max): 10uA. On-resistance Rds On: 2 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. C(in): 515pF. Cost): 55pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Id(imp): 18A. IDss (min): 1uA. Pd (Power Dissipation, Max): 33W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 46 ns. Td(on): 10 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Function: Fast switch, Low gate charge 15nC, Low Crss 6.5pF. G-S Protection: no
FQPF5N60C
N-channel transistor, 2.6A, 4.5A, 10uA, 2 Ohms, TO-220FP, TO-220F, 600V. ID (T=100°C): 2.6A. ID (T=25°C): 4.5A. Idss (max): 10uA. On-resistance Rds On: 2 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. C(in): 515pF. Cost): 55pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Id(imp): 18A. IDss (min): 1uA. Pd (Power Dissipation, Max): 33W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 46 ns. Td(on): 10 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Function: Fast switch, Low gate charge 15nC, Low Crss 6.5pF. G-S Protection: no
Set of 1
1.32£ VAT incl.
(1.10£ excl. VAT)
1.32£
Quantity in stock : 16
SSS7N60A

SSS7N60A

N-channel transistor, 2.5A, 4A, 250uA, 1.2 Ohms, TO-220FP, TO-220F, 600V. ID (T=100°C): 2.5A. ID (T...
SSS7N60A
N-channel transistor, 2.5A, 4A, 250uA, 1.2 Ohms, TO-220FP, TO-220F, 600V. ID (T=100°C): 2.5A. ID (T=25°C): 4A. Idss (max): 250uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. C(in): 1150pF. Cost): 130pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 415 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 28A. IDss (min): 25uA. Pd (Power Dissipation, Max): 48W. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 18 ns. Technology: Power-MOSFET (F). Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
SSS7N60A
N-channel transistor, 2.5A, 4A, 250uA, 1.2 Ohms, TO-220FP, TO-220F, 600V. ID (T=100°C): 2.5A. ID (T=25°C): 4A. Idss (max): 250uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. C(in): 1150pF. Cost): 130pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 415 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 28A. IDss (min): 25uA. Pd (Power Dissipation, Max): 48W. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 18 ns. Technology: Power-MOSFET (F). Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
Set of 1
1.69£ VAT incl.
(1.41£ excl. VAT)
1.69£

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Quantity in stock : 160
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2SK2141

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IRFS630A

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SPP04N60C3XKSA1

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