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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 10A, 1mA, TO-3P ( TO-218 SOT-93 ), 2-16C1B, 180V - 2SK1529

N-channel transistor, 10A, 1mA, TO-3P ( TO-218 SOT-93 ), 2-16C1B, 180V - 2SK1529
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Quantity excl. VAT VAT incl.
1 - 1 8.12£ 9.74£
2 - 2 7.72£ 9.26£
3 - 4 7.31£ 8.77£
5 - 9 6.90£ 8.28£
10 - 19 6.74£ 8.09£
20 - 29 6.58£ 7.90£
30 - 56 6.34£ 7.61£
Quantity U.P
1 - 1 8.12£ 9.74£
2 - 2 7.72£ 9.26£
3 - 4 7.31£ 8.77£
5 - 9 6.90£ 8.28£
10 - 19 6.74£ 8.09£
20 - 29 6.58£ 7.90£
30 - 56 6.34£ 7.61£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 56
Set of 1

N-channel transistor, 10A, 1mA, TO-3P ( TO-218 SOT-93 ), 2-16C1B, 180V - 2SK1529. N-channel transistor, 10A, 1mA, TO-3P ( TO-218 SOT-93 ), 2-16C1B, 180V. ID (T=25°C): 10A. Idss (max): 1mA. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): 2-16C1B. Voltage Vds(max): 180V. C(in): 700pF. Cost): 150pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: High Power Amplifier Application. Marking on the case: K1529. Number of terminals: 3. Pd (Power Dissipation, Max): 120W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Field Effect Silicon N-Channel MOS Type. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Gate/source voltage (off) max.: 2.8V. Gate/source voltage (off) min.: 0.8V. Spec info: complementary transistor (pair) 2SJ200. Drain-source protection : no. G-S Protection: no. Quantity in stock updated on 20/04/2025, 22:25.

Technical documentation

Equivalent products :

Quantity in stock : 146
ECX10N20

ECX10N20

N-channel transistor, 8A, 10mA, TO-247, TO-247, 200V. ID (T=25°C): 8A. Idss (max): 10mA. Housing: T...
ECX10N20
N-channel transistor, 8A, 10mA, TO-247, TO-247, 200V. ID (T=25°C): 8A. Idss (max): 10mA. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 200V. Pinout: 1 - G, 2 - S, 3 - D. C(in): 500pF. Cost): 300pF. Channel type: N. Quantity per case: 1. Various: HI-FI Power Amplifier. Type of transistor: MOSFET. Function: AUDIO POWER Amplifier MOSFET. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 100 ns. Technology: N–CHANNEL POWER MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 14V. Gate/source voltage (off) max.: 1.5V. Gate/source voltage (off) min.: 0.15V. Spec info: complementary transistor (pair) ECX10P20. Drain-source protection : no. G-S Protection: no
ECX10N20
N-channel transistor, 8A, 10mA, TO-247, TO-247, 200V. ID (T=25°C): 8A. Idss (max): 10mA. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 200V. Pinout: 1 - G, 2 - S, 3 - D. C(in): 500pF. Cost): 300pF. Channel type: N. Quantity per case: 1. Various: HI-FI Power Amplifier. Type of transistor: MOSFET. Function: AUDIO POWER Amplifier MOSFET. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 100 ns. Technology: N–CHANNEL POWER MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 14V. Gate/source voltage (off) max.: 1.5V. Gate/source voltage (off) min.: 0.15V. Spec info: complementary transistor (pair) ECX10P20. Drain-source protection : no. G-S Protection: no
Set of 1
10.16£ VAT incl.
(8.47£ excl. VAT)
10.16£

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