NPN-Transistor, 4A, TO-126 (TO-225, SOT-32), TO-225, 100V - MJE253G

NPN-Transistor, 4A, TO-126 (TO-225, SOT-32), TO-225, 100V - MJE253G. NPN-Transistor, 4A, TO-126 (TO-225, SOT-32), TO-225, 100V. Collector current: 4A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 100V. BE diode: no. Cost): 200pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 40 MHz. Function: High speed switching. Audio. Max hFE gain: 180. Minimum hFE gain: 40. Ic(pulse): 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 15W. RoHS: yes. Spec info: complementary transistor (pair) MJE243. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.3V. Vebo: 7V. Original product from manufacturer ON Semiconductor. Quantity in stock updated on 08/06/2025, 07:25.