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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 0.1A, 50V - KRC102M

NPN transistor, 0.1A, 50V - KRC102M
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[TITLE]
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Quantity excl. VAT VAT incl.
1 - 1 1.42£ 1.70£
Quantity U.P
1 - 1 1.42£ 1.70£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 1
Set of 1

NPN transistor, 0.1A, 50V - KRC102M. NPN transistor, 0.1A, 50V. Collector current: 0.1A. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. Type of transistor: NPN. Spec info: TO-92M. Quantity in stock updated on 21/04/2025, 07:25.

Technical documentation

Equivalent products :

Quantity in stock : 20
FJN3302R

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NPN transistor, 100mA, TO-92, TO-92, 50V. Collector current: 100mA. Housing: TO-92. Housing (accordi...
FJN3302R
NPN transistor, 100mA, TO-92, TO-92, 50V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Semiconductor material: silicon. FT: 250 MHz. Function: switching circuits. Minimum hFE gain: 30. Ic(pulse): 300mA. Temperature: +150°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Type of transistor: NPN. Vcbo: 50V. Saturation voltage VCE(sat): 0.3V. Vebo: 10V. Number of terminals: 3. Quantity per case: 1. Spec info: SAMSUNG 0504-000117
FJN3302R
NPN transistor, 100mA, TO-92, TO-92, 50V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Semiconductor material: silicon. FT: 250 MHz. Function: switching circuits. Minimum hFE gain: 30. Ic(pulse): 300mA. Temperature: +150°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Type of transistor: NPN. Vcbo: 50V. Saturation voltage VCE(sat): 0.3V. Vebo: 10V. Number of terminals: 3. Quantity per case: 1. Spec info: SAMSUNG 0504-000117
Set of 1
0.52£ VAT incl.
(0.43£ excl. VAT)
0.52£

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