KBU8M

Quantity	excl. VAT	VAT incl.
1 - 4	0.73£	0.88£
5 - 9	0.70£	0.84£
10 - 24	0.66£	0.79£
25 - 49	0.62£	0.74£
50 - 75	0.61£	0.73£

Quantity	U.P
1 - 4	0.73£	0.88£
5 - 9	0.70£	0.84£
10 - 24	0.66£	0.79£
25 - 49	0.62£	0.74£
50 - 75	0.61£	0.73£

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 75

Set of 1

KBU8M. VRRM: 1000V. Forward current (AV): 8A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 200A. MRI (max): 500uA. MRI (min): 5uA. Equivalents: KBU8M, KBU807. Number of terminals: 4. Pitch: 5.08x5.08mm. Dimensions: 21.5x18.3x3.4mm. RoHS: yes. Spec info: IFSM--200Ap (t=8.3ms), IFSM--180Ap (t=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. Original product from manufacturer Diotec Semiconductor. Quantity in stock updated on 08/05/2025, 11:25.

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Delivery in 2-3 days, with postal tracking!