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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 1.4A, 2.4A, 250uA, 3 Ohms, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 500V - IRFU420

N-channel transistor, 1.4A, 2.4A, 250uA, 3 Ohms, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 500V - IRFU420
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 0.76£ 0.91£
5 - 9 0.72£ 0.86£
10 - 24 0.68£ 0.82£
25 - 39 0.64£ 0.77£
Quantity U.P
1 - 4 0.76£ 0.91£
5 - 9 0.72£ 0.86£
10 - 24 0.68£ 0.82£
25 - 39 0.64£ 0.77£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 39
Set of 1

N-channel transistor, 1.4A, 2.4A, 250uA, 3 Ohms, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 500V - IRFU420. N-channel transistor, 1.4A, 2.4A, 250uA, 3 Ohms, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 500V. ID (T=100°C): 1.4A. ID (T=25°C): 2.4A. Idss (max): 250uA. On-resistance Rds On: 3 Ohms. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Voltage Vds(max): 500V. C(in): 360pF. Cost): 92pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Fast Switching, Dynamic dv/dt Rating. Id(imp): 8A. IDss (min): 25uA. Pd (Power Dissipation, Max): 42W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 8 ns. Td(on): 33 ns. Technology: third-generation power MOSFET transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Quantity in stock updated on 22/04/2025, 08:25.

Technical documentation

Equivalent products :

Quantity in stock : 54
IRFR420

IRFR420

N-channel transistor, 1.5A, 2.4A, 0.025mA, 250uA, 3 Ohms, D-PAK TO-252AA, 500V. ID (T=100°C): 1.5A....
IRFR420
N-channel transistor, 1.5A, 2.4A, 0.025mA, 250uA, 3 Ohms, D-PAK TO-252AA, 500V. ID (T=100°C): 1.5A. ID (T=25°C): 2.4A. Idss: 0.025mA. Idss (max): 250uA. On-resistance Rds On: 3 Ohms. Housing (according to data sheet): D-PAK TO-252AA. Voltage Vds(max): 500V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 8A. IDss (min): 25uA. Pd (Power Dissipation, Max): 42W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no
IRFR420
N-channel transistor, 1.5A, 2.4A, 0.025mA, 250uA, 3 Ohms, D-PAK TO-252AA, 500V. ID (T=100°C): 1.5A. ID (T=25°C): 2.4A. Idss: 0.025mA. Idss (max): 250uA. On-resistance Rds On: 3 Ohms. Housing (according to data sheet): D-PAK TO-252AA. Voltage Vds(max): 500V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 8A. IDss (min): 25uA. Pd (Power Dissipation, Max): 42W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no
Set of 1
1.13£ VAT incl.
(0.94£ excl. VAT)
1.13£

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