Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 4.46£ | 5.35£ |
2 - 2 | 4.24£ | 5.09£ |
3 - 4 | 4.01£ | 4.81£ |
5 - 9 | 3.79£ | 4.55£ |
10 - 19 | 3.70£ | 4.44£ |
20 - 29 | 3.61£ | 4.33£ |
30 - 52 | 3.48£ | 4.18£ |
Quantity | U.P | |
---|---|---|
1 - 1 | 4.46£ | 5.35£ |
2 - 2 | 4.24£ | 5.09£ |
3 - 4 | 4.01£ | 4.81£ |
5 - 9 | 3.79£ | 4.55£ |
10 - 19 | 3.70£ | 4.44£ |
20 - 29 | 3.61£ | 4.33£ |
30 - 52 | 3.48£ | 4.18£ |
N-channel transistor, 3.9A, 6.1A, 500uA, 2 Ohms, TO-247, TO-247AC, 1000V - IRFPG50. N-channel transistor, 3.9A, 6.1A, 500uA, 2 Ohms, TO-247, TO-247AC, 1000V. ID (T=100°C): 3.9A. ID (T=25°C): 6.1A. Idss (max): 500uA. On-resistance Rds On: 2 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 1000V. C(in): 2800pF. Cost): 250pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 630 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 24A. IDss (min): 100uA. Pd (Power Dissipation, Max): 190W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 19 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+150°C. Gate/emitter voltage VGE(th) min.: 2V. Vgs(th) max.: 4 v. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 21/04/2025, 06:25.
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