Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 3.99£ | 4.79£ |
5 - 9 | 3.80£ | 4.56£ |
10 - 24 | 3.60£ | 4.32£ |
25 - 49 | 3.40£ | 4.08£ |
50 - 99 | 3.32£ | 3.98£ |
100 - 127 | 2.88£ | 3.46£ |
Quantity | U.P | |
---|---|---|
1 - 4 | 3.99£ | 4.79£ |
5 - 9 | 3.80£ | 4.56£ |
10 - 24 | 3.60£ | 4.32£ |
25 - 49 | 3.40£ | 4.08£ |
50 - 99 | 3.32£ | 3.98£ |
100 - 127 | 2.88£ | 3.46£ |
N-channel transistor, 4.7A, 7.8A, 500uA, 1.2 Ohms, TO-247, TO-247AC, 800V - IRFPE50. N-channel transistor, 4.7A, 7.8A, 500uA, 1.2 Ohms, TO-247, TO-247AC, 800V. ID (T=100°C): 4.7A. ID (T=25°C): 7.8A. Idss (max): 500uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 800V. C(in): 3100pF. Cost): 800pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 650 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 31A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 190W. Assembly/installation: PCB through-hole mounting. Td(off): 120ns. Td(on): 19 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 21/04/2025, 01:25.
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