Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.14£ | 1.37£ |
5 - 9 | 1.08£ | 1.30£ |
10 - 24 | 1.03£ | 1.24£ |
25 - 49 | 0.97£ | 1.16£ |
50 - 99 | 0.95£ | 1.14£ |
100 - 249 | 0.87£ | 1.04£ |
250 - 326 | 0.83£ | 1.00£ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.14£ | 1.37£ |
5 - 9 | 1.08£ | 1.30£ |
10 - 24 | 1.03£ | 1.24£ |
25 - 49 | 0.97£ | 1.16£ |
50 - 99 | 0.95£ | 1.14£ |
100 - 249 | 0.87£ | 1.04£ |
250 - 326 | 0.83£ | 1.00£ |
N-channel transistor, 23A, 33A, 250uA, 0.044 Ohms, TO-220, TO-220AB, 100V - IRF540N. N-channel transistor, 23A, 33A, 250uA, 0.044 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 23A. ID (T=25°C): 33A. Idss (max): 250uA. On-resistance Rds On: 0.044 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 1960pF. Cost): 250pF. Channel type: N. Trr Diode (Min.): 115 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 110A. IDss (min): 25uA. Pd (Power Dissipation, Max): 130W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 20/04/2025, 16:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.