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N-channel transistor, 130A, 190A, 250uA, 2.7M Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 40V - IRF1404S

N-channel transistor, 130A, 190A, 250uA, 2.7M Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 40V - IRF1404S
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Quantity excl. VAT VAT incl.
1 - 4 4.09£ 4.91£
5 - 9 3.89£ 4.67£
10 - 15 3.68£ 4.42£
Quantity U.P
1 - 4 4.09£ 4.91£
5 - 9 3.89£ 4.67£
10 - 15 3.68£ 4.42£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 15
Set of 1

N-channel transistor, 130A, 190A, 250uA, 2.7M Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 40V - IRF1404S. N-channel transistor, 130A, 190A, 250uA, 2.7M Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 40V. ID (T=100°C): 130A. ID (T=25°C): 190A. Idss (max): 250uA. On-resistance Rds On: 2.7M Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 40V. C(in): 4340pF. Cost): 1030pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 28 ns. Type of transistor: MOSFET. Function: AUTOMOTIVE MOSFET. Id(imp): 750A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 220W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 36ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 21/04/2025, 01:25.

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