IGBT transistors

IGBT transistor. C(in): 2870pF. Cost): 295pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 45 ns. Function: IGBT transistor with built-in high-speed free-wheeling diode. Germanium diode: no. Collector current: 70A. Ic(pulse): 220A. Ic(T=100°C): 38A. Marking on the case: GW20NC60KD. Number of terminals: 3. Pd (Power Dissipation, Max): 250W. RoHS: yes. Spec info: Very Fast PowerMESH™ IGBT. Assembly/installation: PCB through-hole mounting. Td(off): 164 ns. Td(on): 46 ns. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.1V. Maximum saturation voltage VCE(sat): 2.7V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 6.5V

IGBT transistor. C(in): 8000pF. Cost): 280pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 74 ns. Germanium diode: no. Collector current: 80A. Ic(pulse): 240A. Ic(T=100°C): 60A. Marking on the case: GW60V60DF. Number of terminals: 3. Pd (Power Dissipation, Max): 375W. RoHS: yes. Spec info: Trench gate field-stop IGBT, V series. Assembly/installation: PCB through-hole mounting. Td(off): 216 ns. Td(on): 57 ns. Housing: TO-247. Operating temperature: -55...+175°C. Saturation voltage VCE(sat): 1.85V. Maximum saturation voltage VCE(sat): 2.3V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5V. Gate/emitter voltage VGE(th)max.: 7V