Electronic components and equipment, for businesses and individuals

N-channel transistor, 10.9A, 17.2A, 10uA, 0.046 Ohms, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 60V - FQU20N06L

N-channel transistor, 10.9A, 17.2A, 10uA, 0.046 Ohms, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 60V - FQU20N06L
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 0.77£ 0.92£
5 - 9 0.73£ 0.88£
10 - 24 0.69£ 0.83£
25 - 35 0.66£ 0.79£
Quantity U.P
1 - 4 0.77£ 0.92£
5 - 9 0.73£ 0.88£
10 - 24 0.69£ 0.83£
25 - 35 0.66£ 0.79£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 35
Set of 1

N-channel transistor, 10.9A, 17.2A, 10uA, 0.046 Ohms, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 60V - FQU20N06L. N-channel transistor, 10.9A, 17.2A, 10uA, 0.046 Ohms, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 60V. ID (T=100°C): 10.9A. ID (T=25°C): 17.2A. Idss (max): 10uA. On-resistance Rds On: 0.046 Ohms. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Voltage Vds(max): 60V. C(in): 480pF. Cost): 175pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 54 ns. Type of transistor: MOSFET. Function: Logic-Level. Id(imp): 68.8A. IDss (min): 1uA. Pd (Power Dissipation, Max): 38W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 10 ns. Technology: QFET, Enhancement mode power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Number of terminals: 3. Quantity per case: 1. Spec info: low Gate Charge (typ 9.5nC). G-S Protection: no. Quantity in stock updated on 21/04/2025, 09:25.

Information and technical help

By phone :

Payment and delivery

Delivery in 2-3 days, with postal tracking!

Subscribe to the newsletter

I agree to receive emails, and I understand that I can unsubscribe at any time after subscribing.

All rights reserved, RPtronics, 2024.