N-channel transistor, 11.7A, 18.5A, 100uA, 0.3 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 600V - FQA19N60

N-channel transistor, 11.7A, 18.5A, 100uA, 0.3 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 600V - FQA19N60. N-channel transistor, 11.7A, 18.5A, 100uA, 0.3 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 600V. ID (T=100°C): 11.7A. ID (T=25°C): 18.5A. Idss (max): 100uA. On-resistance Rds On: 0.3 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 600V. C(in): 2800pF. Cost): 350pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 420 ns. Type of transistor: MOSFET. Id(imp): 74A. IDss (min): 10uA. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 65 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Function: Fast switching, Low gate charge (typical 44nC). G-S Protection: no. Quantity in stock updated on 21/04/2025, 23:25.