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BYV32E-200

BYV32E-200
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 0.99£ 1.19£
5 - 9 0.94£ 1.13£
10 - 24 0.89£ 1.07£
25 - 49 0.84£ 1.01£
50 - 99 0.82£ 0.98£
100 - 249 0.93£ 1.12£
250 - 2024 1.03£ 1.24£
Quantity U.P
1 - 4 0.99£ 1.19£
5 - 9 0.94£ 1.13£
10 - 24 0.89£ 1.07£
25 - 49 0.84£ 1.01£
50 - 99 0.82£ 0.98£
100 - 249 0.93£ 1.12£
250 - 2024 1.03£ 1.24£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 2024
Set of 1

BYV32E-200. Forward current (AV): 10A. IFSM: 125A. Housing: TO-220. Housing (according to data sheet): SOT78 (TO-220AB). VRRM: 200V. Conditioning: plastic tube. Conditioning unit: 50. Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: ULTRA FAST. Marking on the case: BYV32E-200. Equivalents: BYV32-200G, BYV32E-200.127, BYV32-200-E3/45. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.72V. Quantity per case: 2. Number of terminals: 3. Note: common cathode. Spec info: Ifsm 125A t=10ms. Quantity in stock updated on 20/04/2025, 23:25.

Equivalent products :

Quantity in stock : 70
MUR1620CT

MUR1620CT

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. ...
MUR1620CT
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 200V. Dielectric structure: common cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. MRI (max): 250uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.975V. Forward voltage Vf (min): 0.895V. Quantity per case: 2. Number of terminals: 3. Spec info: Ifsm 100Ap
MUR1620CT
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 200V. Dielectric structure: common cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. MRI (max): 250uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.975V. Forward voltage Vf (min): 0.895V. Quantity per case: 2. Number of terminals: 3. Spec info: Ifsm 100Ap
Set of 1
2.05£ VAT incl.
(1.71£ excl. VAT)
2.05£
Quantity in stock : 40
MUR1660CT

MUR1660CT

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. ...
MUR1660CT
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. MRI (max): 500uA. MRI (min): 10uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V. Quantity per case: 2. Number of terminals: 3. Note: common cathode. Spec info: Ifsm 100Ap
MUR1660CT
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. MRI (max): 500uA. MRI (min): 10uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V. Quantity per case: 2. Number of terminals: 3. Note: common cathode. Spec info: Ifsm 100Ap
Set of 1
1.92£ VAT incl.
(1.60£ excl. VAT)
1.92£
Quantity in stock : 2024
BYV32E-200

BYV32E-200

Forward current (AV): 10A. IFSM: 125A. Housing: TO-220. Housing (according to data sheet): SOT78 (TO...
BYV32E-200
Forward current (AV): 10A. IFSM: 125A. Housing: TO-220. Housing (according to data sheet): SOT78 (TO-220AB). VRRM: 200V. Conditioning: plastic tube. Conditioning unit: 50. Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: ULTRA FAST. Marking on the case: BYV32E-200. Equivalents: BYV32-200G, BYV32E-200.127, BYV32-200-E3/45. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.72V. Quantity per case: 2. Number of terminals: 3. Note: common cathode. Spec info: Ifsm 125A t=10ms
BYV32E-200
Forward current (AV): 10A. IFSM: 125A. Housing: TO-220. Housing (according to data sheet): SOT78 (TO-220AB). VRRM: 200V. Conditioning: plastic tube. Conditioning unit: 50. Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: ULTRA FAST. Marking on the case: BYV32E-200. Equivalents: BYV32-200G, BYV32E-200.127, BYV32-200-E3/45. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.72V. Quantity per case: 2. Number of terminals: 3. Note: common cathode. Spec info: Ifsm 125A t=10ms
Set of 1
1.19£ VAT incl.
(0.99£ excl. VAT)
1.19£

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