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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 5A, TO-220FP, TO-220F, 450V - BUT11AF-F

NPN transistor, 5A, TO-220FP, TO-220F, 450V - BUT11AF-F
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 1 2.13£ 2.56£
Quantity U.P
1 - 1 2.13£ 2.56£
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Quantity in stock : 1
Set of 1

NPN transistor, 5A, TO-220FP, TO-220F, 450V - BUT11AF-F. NPN transistor, 5A, TO-220FP, TO-220F, 450V. Collector current: 5A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 450V. Semiconductor material: silicon. Function: S-L. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1000V. Number of terminals: 3. Quantity per case: 1. Quantity in stock updated on 21/04/2025, 02:25.

Equivalent products :

Quantity in stock : 11
MJE18008

MJE18008

NPN transistor, 8A, TO-220, TO-220AB, 450V. Collector current: 8A. Housing: TO-220. Housing (accordi...
MJE18008
NPN transistor, 8A, TO-220, TO-220AB, 450V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 450V. C(in): 1750pF. Cost): 100pF. Quantity per case: 1. Semiconductor material: silicon. FT: 13MHz. Function: Switching mode Power Supply Applications. Max hFE gain: 14. Minimum hFE gain: 34. Ic(pulse): 16A. Pd (Power Dissipation, Max): 120W. RoHS: yes. Type of transistor: NPN. Operating temperature: -60...+150°C. Vcbo: 1000V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 0.6V. BE diode: no. CE diode: no
MJE18008
NPN transistor, 8A, TO-220, TO-220AB, 450V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 450V. C(in): 1750pF. Cost): 100pF. Quantity per case: 1. Semiconductor material: silicon. FT: 13MHz. Function: Switching mode Power Supply Applications. Max hFE gain: 14. Minimum hFE gain: 34. Ic(pulse): 16A. Pd (Power Dissipation, Max): 120W. RoHS: yes. Type of transistor: NPN. Operating temperature: -60...+150°C. Vcbo: 1000V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 0.6V. BE diode: no. CE diode: no
Set of 1
3.11£ VAT incl.
(2.59£ excl. VAT)
3.11£
Quantity in stock : 62
BUT11AX-PHI

BUT11AX-PHI

NPN transistor, 5A, TO-220FP, TO-220F, 450V. Collector current: 5A. Housing: TO-220FP. Housing (acco...
BUT11AX-PHI
NPN transistor, 5A, TO-220FP, TO-220F, 450V. Collector current: 5A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 450V. Semiconductor material: silicon. Function: S-L. Pd (Power Dissipation, Max): 32W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1000V. Quantity per case: 1. Spec info: Tf 170ns
BUT11AX-PHI
NPN transistor, 5A, TO-220FP, TO-220F, 450V. Collector current: 5A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 450V. Semiconductor material: silicon. Function: S-L. Pd (Power Dissipation, Max): 32W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1000V. Quantity per case: 1. Spec info: Tf 170ns
Set of 1
2.22£ VAT incl.
(1.85£ excl. VAT)
2.22£
Quantity in stock : 43
BUT11APX

BUT11APX

NPN transistor, 5A, TO-220FP, TO-220F ( SOT186A ), 450V. Collector current: 5A. Housing: TO-220FP. H...
BUT11APX
NPN transistor, 5A, TO-220FP, TO-220F ( SOT186A ), 450V. Collector current: 5A. Housing: TO-220FP. Housing (according to data sheet): TO-220F ( SOT186A ). Collector/emitter voltage Vceo: 450V. Semiconductor material: silicon. Max hFE gain: 35. Minimum hFE gain: 10. Ic(pulse): 10A. Pd (Power Dissipation, Max): 32W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Power Transistor. Tf(max): 160 ns. Tf(min): 145 ns. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 1000V. Saturation voltage VCE(sat): 0.25V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no
BUT11APX
NPN transistor, 5A, TO-220FP, TO-220F ( SOT186A ), 450V. Collector current: 5A. Housing: TO-220FP. Housing (according to data sheet): TO-220F ( SOT186A ). Collector/emitter voltage Vceo: 450V. Semiconductor material: silicon. Max hFE gain: 35. Minimum hFE gain: 10. Ic(pulse): 10A. Pd (Power Dissipation, Max): 32W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Power Transistor. Tf(max): 160 ns. Tf(min): 145 ns. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 1000V. Saturation voltage VCE(sat): 0.25V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no
Set of 1
2.05£ VAT incl.
(1.71£ excl. VAT)
2.05£

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