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NPN transistor, 5A, TO-220, TO-220, 450V - BUT11A

NPN transistor, 5A, TO-220, TO-220, 450V - BUT11A
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[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.39£ 1.67£
5 - 9 1.32£ 1.58£
10 - 24 1.28£ 1.54£
25 - 33 1.25£ 1.50£
Quantity U.P
1 - 4 1.39£ 1.67£
5 - 9 1.32£ 1.58£
10 - 24 1.28£ 1.54£
25 - 33 1.25£ 1.50£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 33
Set of 1

NPN transistor, 5A, TO-220, TO-220, 450V - BUT11A. NPN transistor, 5A, TO-220, TO-220, 450V. Collector current: 5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 450V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: High voltage fast switching. Max hFE gain: 35. Minimum hFE gain: 10. Ic(pulse): 10A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 83W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 4us. Tf(min): 0.8us. Type of transistor: NPN. Vcbo: 1000V. Saturation voltage VCE(sat): 1.3V. Vebo: 9V. Quantity in stock updated on 26/07/2025, 12:25.

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Quantity in stock : 18
MJF18204

MJF18204

NPN transistor, 5A, TO-220FP, TO-220F, 600V. Collector current: 5A. Housing: TO-220FP. Housing (acco...
MJF18204
NPN transistor, 5A, TO-220FP, TO-220F, 600V. Collector current: 5A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 600V. BE diode: no. BE resistor: 50. Cost): 156pF. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 13 MHz. Function: switching circuits. Max hFE gain: 35. Minimum hFE gain: 18. Ic(pulse): 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 175 ns. Tf(min): 110 ns. Type of transistor: NPN. Operating temperature: -65...+175°C. Vcbo: 1200V. Saturation voltage VCE(sat): 0.83V. Vebo: 10V
MJF18204
NPN transistor, 5A, TO-220FP, TO-220F, 600V. Collector current: 5A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 600V. BE diode: no. BE resistor: 50. Cost): 156pF. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 13 MHz. Function: switching circuits. Max hFE gain: 35. Minimum hFE gain: 18. Ic(pulse): 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 175 ns. Tf(min): 110 ns. Type of transistor: NPN. Operating temperature: -65...+175°C. Vcbo: 1200V. Saturation voltage VCE(sat): 0.83V. Vebo: 10V
Set of 1
2.24£ VAT incl.
(1.87£ excl. VAT)
2.24£

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